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Description:
LAM 580 Oxide Etchers
(580)
Fully automated microprocessor control. High-throughput vacuum loadlocked. Programmable, variable electrode spacing. End point detection. Cassette to cassette. Can accomodate 3" to 6" wafers. Five gas channel maximum. RF power 1250 watts @ 13.56 MHz. 208 VAC, 3 Phase, 60 Hz.
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